QA3111N6N mosfet equivalent, 30v asymmetric dual n-channel power mosfet.
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available
Product Summary
VDS Die1 30V
RDS(ON) .
The QA3111N6N meets RoHS and Green Product requirements while supporting full function reliability.
Features
Advance.
The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications.
The.
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